2SK3820-DL-1E
MOSFET N-CH 100V 26A TO263-2Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK3820-DL-1E is an N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 26A at 25°C. With a low on-resistance (Rds On) of 60mOhm at 13A and 10V Vgs, it minimizes conduction losses. The MOSFET is housed in a TO-263-2 (TO-263AB) surface-mount package, offering efficient thermal management with a maximum power dissipation of 1.65W (Ta) and 50W (Tc). Key parameters include a gate charge (Qg) of 44nC at 10V and input capacitance (Ciss) of 2150pF at 20V. This component is suitable for use in industrial automation, power supplies, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-263-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 20 V |
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