2SK3817-DL-E
MOSFET N-CH 60V 60A SMP-FDManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi 2SK3817-DL-E is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 60A. With a low on-resistance of 15mOhm at 30A and 10V Vgs, it minimizes conduction losses. The 2SK3817-DL-E offers a maximum junction temperature of 150°C and a power dissipation of 1.65W at ambient temperature or 65W when heatsinked. Key parameters include a gate charge of 67 nC and input capacitance of 3500 pF. The component is supplied in a TO-252-3, DPAK package, suitable for surface mounting and delivered on tape and reel. This MOSFET is widely utilized in power supply units, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | SMP-FD |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 20 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
