2SK3816-DL-E
MOSFET N-CH 60V 40A SMP-FDManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK3816-DL-E is an N-Channel MOSFET in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 40A at 25°C (Ta). With a maximum on-resistance (Rds On) of 26mOhm at 20A and 10V, it offers efficient power handling. The MOSFET utilizes Metal Oxide technology and is designed for surface mounting. Key parameters include a gate charge (Qg) of 40nC at 10V and an input capacitance (Ciss) of 1780pF at 20V. Power dissipation is rated at 1.65W (Ta) and 50W (Tc). This component is commonly employed in industrial and automotive applications. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | SMP-FD |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1780 pF @ 20 V |