2SK3816-DL-1E
MOSFET N-CH 60V 40A TO263-2Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK3816-DL-1E is an N-Channel MOSFET designed for high-performance power switching applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) capability of 40A at 25°C (Ta). The low on-resistance (Rds On) of 26mOhm at 20A and 10V Vgs makes it suitable for efficient power conversion. With a maximum Gate Charge (Qg) of 40 nC at 10V and an Input Capacitance (Ciss) of 1780 pF at 20V, it offers robust driving characteristics. The TO-263-2 package facilitates surface mounting and provides excellent thermal management, with a maximum power dissipation of 1.65W (Ta) and 50W (Tc). This component is commonly utilized in industrial power supplies, automotive electronics, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-263-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1780 pF @ 20 V |
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