2SK3747
MOSFET N-CH 1500V 2A TO3PMLManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK3747 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 1500V and a continuous Drain Current (Id) of 2A at 25°C (Ta). With a maximum junction temperature of 150°C, it offers a power dissipation of 3W (Ta) and 50W (Tc). The MOSFET exhibits a typical Rds On of 13 Ohms at 1A and 10V gate drive. Key parameters include Ciss of 380 pF (max) at 30V and Qg of 37.5 nC at 10V. Packaged in a TO-3PML (TO-3P-3 Full Pack) for through-hole mounting, this component is suitable for power supplies, motor control, and industrial power applications.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 13Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3PML |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±35V |
| Drain to Source Voltage (Vdss) | 1500 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 30 V |
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