2SK3708
MOSFET N-CH 100V 30A TO220MLManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SK3708 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C (Ta). With a low on-resistance (Rds On) of 33mOhm at 15A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 2W (Ta) and 30W (Tc), supported by a junction temperature rating of 150°C. Key electrical characteristics include a gate charge (Qg) of 73 nC at 10V and input capacitance (Ciss) of 4200 pF at 20V. The 2SK3708 is housed in a TO-220ML package and is utilized in power supply, industrial motor control, and automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220ML |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 20 V |
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