2SK3707-1E
MOSFET N-CH 100V 20A TO220F-3SGManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi 2SK3707-1E is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 20A at 25°C ambient temperature. The Rds(on) is specified at a maximum of 60mOhm at 10A and 10V Vgs. Key parameters include a gate charge (Qg) of 44 nC at 10V and input capacitance (Ciss) of 2150 pF at 20V Vds. The device supports gate-source voltages up to ±20V. With a maximum power dissipation of 2W (Ta) and 25W (Tc), it is housed in a TO-220F-3SG package suitable for through-hole mounting. This MOSFET is utilized in power conversion, motor control, and power supply circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220F-3SG |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 20 V |
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