2SK3703-1E
MOSFET N-CH 60V 30A TO220F-3SGManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi N-Channel Power MOSFET, part number 2SK3703-1E, is designed for applications requiring high current handling and efficient switching. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 30A at 25°C. The Rds On is specified at a maximum of 26mOhm at 15A and 10V. The MOSFET is packaged in a TO-220F-3SG (Full Pack) for through-hole mounting. Key parameters include a Gate Charge (Qg) of 40nC at 10V and Input Capacitance (Ciss) of 1780pF at 20V. Power dissipation is rated at 2W (Ta) and 25W (Tc). This component is suitable for use in power supply, motor control, and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220F-3SG |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1780 pF @ 20 V |
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