2SK3703
MOSFET N-CH 60V 30A TO220MLManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi 2SK3703 N-Channel MOSFET, housed in a TO-220ML package, offers a continuous drain current of 30A (Ta) at 25°C with a drain-to-source voltage (Vdss) of 60 V. This device features a low on-resistance (Rds On) of 26mOhm at 15A and 10V, supported by a gate drive voltage range of 4V to 10V. Key electrical characteristics include a maximum gate charge (Qg) of 40 nC at 10 V and an input capacitance (Ciss) of 1780 pF at 20 V. The power dissipation is rated at 2W (Ta) and 25W (Tc), with an operating junction temperature of 150°C. This through-hole component is suitable for applications in power switching, motor control, and voltage regulation across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220ML |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1780 pF @ 20 V |