2SJ665-DL-E
MOSFET P-CH 100V 27A SMP-FDManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SJ665-DL-E is a P-Channel MOSFET designed for demanding power applications. This component features a Drain to Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 27A at 25°C (Ta). With a maximum Rds On of 77mOhm at 14A and 10V, it offers efficient power handling. The device supports drive voltages from 4V to 10V and has a gate charge (Qg) of 74 nC at 10V. Input capacitance (Ciss) is rated at 4200 pF at 20V.
The 2SJ665-DL-E is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package, suitable for surface mounting. It can dissipate up to 1.65W (Ta) or 65W (Tc) and operates at temperatures up to 150°C (TJ). This MOSFET is commonly employed in automotive and industrial power management systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | SMP-FD |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 20 V |