2SJ665-DL-1EX
MOSFET P-CH 100V 27A TO263-2Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi P-Channel MOSFET 2SJ665-DL-1EX offers a 100V drain-source voltage capability with a continuous drain current of 27A at 25°C. This device features a low on-resistance of 77mOhm maximum at 14A and 10V Vgs. The 2SJ665-DL-1EX is housed in a TO-263-2 surface mount package, enabling efficient thermal management with a maximum power dissipation of 65W (Tc). Key parameters include a gate charge of 74 nC maximum at 10V and an input capacitance of 4200 pF maximum at 20V. It operates across a temperature range of -55°C to 150°C (TA). This component finds application in power management solutions across various industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TA) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-263-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 20 V |
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