2SJ661-DL-E
MOSFET P-CH 60V 38A SMP-FDManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi 2SJ661-DL-E is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 38A at 25°C with a maximum junction temperature of 150°C. The Rds(On) is specified at a maximum of 39mOhm at 19A and 10V gate drive. With a gate charge (Qg) of 80 nC at 10V and an input capacitance (Ciss) of 4360 pF at 20V, this MOSFET offers efficient switching characteristics. Power dissipation is rated at 1.65W (Ta) and 65W (Tc). The 2SJ661-DL-E is housed in a TO-263-3, D2PAK (2 Leads + Tab) package, facilitating surface mounting for optimal thermal management. This component is suitable for use in power supply, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Ta) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | SMP-FD |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4360 pF @ 20 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
FDP4D5N10C
MOSFET N-CH 100V 128A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
