2SJ661-DL-1E
MOSFET P-CH 60V 38A TO263-2Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SJ661-DL-1E is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 38A at 25°C (Ta). With a low on-resistance (Rds On) of 39mOhm at 19A and 10V Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4V to 10V and has a maximum gate-source voltage of ±20V. Its surface mount TO-263-2 package facilitates efficient thermal management, offering a maximum power dissipation of 1.65W (Ta) and 65W (Tc). Key parameters include a gate charge of 80nC at 10V and input capacitance of 4360pF at 20V. This MOSFET is suitable for use in power supply, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Ta) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-263-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4360 pF @ 20 V |
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