2SJ661-1E
MOSFET P-CH 60V 38A TO262-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SJ661-1E is a P-Channel Power MOSFET designed for high-performance applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain current (Id) capability of 38A at 25°C (Ta). With a low on-resistance (Rds On) of 39mOhm maximum at 19A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a maximum junction temperature of 150°C and a power dissipation of 1.65W (Ta) or 65W (Tc). Key parameters include a Gate Charge (Qg) of 80 nC (max) at 10V Vgs and an Input Capacitance (Ciss) of 4360 pF (max) at 20V Vds. The device is housed in a TO-262-3 package, suitable for through-hole mounting. Applications include power management, motor control, and power supplies across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Ta) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4360 pF @ 20 V |
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