2SJ656
MOSFET P-CH 100V 18A TO220MLManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi P-Channel MOSFET 2SJ656, a TO-220ML packaged component, offers a 100V drain-source voltage (Vdss) and 18A continuous drain current (Id) at 25°C. This device features a maximum on-resistance (Rds On) of 75.5mOhm at 9A and 10V Vgs, with a gate charge (Qg) of 74 nC at 10V. Input capacitance (Ciss) is specified at 4200 pF maximum at 20V. The operating junction temperature range is -55°C to 150°C. Power dissipation is rated at 2W (Ta) and 30W (Tc). The TO-220ML package facilitates through-hole mounting. This component is suitable for applications in power management and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 75.5mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220ML |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 20 V |
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