2SJ655
MOSFET P-CH 100V 12A TO220MLManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi 2SJ655, a P-Channel MOSFET, offers a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 12A at 25°C (Ta). This component features a low Rds(on) of 136mOhm at 6A, 10V, and a gate charge (Qg) of 41 nC at 10V. The input capacitance (Ciss) is 2090 pF at 20V. Dissipation ratings are 2W (Ta) and 25W (Tc). Packaged in a TO-220ML (TO-220-3 Full Pack) with a through-hole mounting type, the 2SJ655 operates at temperatures up to 150°C (TJ). This MOSFET is suitable for applications in power supply units and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 136mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220ML |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2090 pF @ 20 V |
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