2SJ652-1E
MOSFET P-CH 60V 28A TO220F-3SGManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SJ652-1E is a P-Channel Power MOSFET designed for robust performance in demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 28A at 25°C (Ta), this component offers significant power handling capability. Its low On-Resistance (Rds On) of 38mOhm at 14A and 10V gate drive voltage ensures efficient operation with minimal power loss. The MOSFET's technology utilizes Metal Oxide for rapid switching characteristics.
With a maximum power dissipation of 2W (Ta) and 30W (Tc), and an operating junction temperature of 150°C, the 2SJ652-1E is suitable for use in industrial, automotive, and power management systems. The component is housed in a TO-220F-3SG package with a through-hole mounting type. Key electrical parameters include a gate charge (Qg) of 80 nC at 10V and input capacitance (Ciss) of 4360 pF at 20V. The absolute maximum gate-source voltage (Vgs) is ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220F-3SG |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4360 pF @ 20 V |
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