2SJ650
MOSFET P-CH 60V 12A TO220MLManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SJ650 is a P-Channel MOSFET designed for power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain current (Id) of 12A at 25°C. The device offers a low on-resistance (Rds On) of 135mOhm at 6A and 10V, contributing to efficient power transfer. With a maximum junction temperature of 150°C and power dissipation of 2W (Ta) or 20W (Tc), it is suitable for demanding thermal environments. The 2SJ650 is housed in a TO-220ML package, facilitating through-hole mounting. Key electrical characteristics include an input capacitance (Ciss) of 1020pF at 20V and a gate charge (Qg) of 21nC at 10V. This MOSFET finds application in various industrial sectors including automotive and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220ML |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 20 V |
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