2SJ635-TL-E
2SJ635 - P-CHANNEL SILICON MOSFEManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2SJ635-TL-E is a P-Channel Silicon MOSFET designed for power switching applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) capability of 12A at 25°C ambient. The MOSFET exhibits a maximum On-Resistance (Rds On) of 60mOhm at 6A and 10V Vgs. With a gate charge (Qg) of 45 nC at 10V and input capacitance (Ciss) of 2200 pF at 20V, it is suitable for various power management circuits. The device supports drive voltages from 4V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. Power dissipation is rated at 1W (Ta) and 30W (Tc). The TO-251-3 Short Leads IPAK package facilitates integration into PCB designs. This component finds application in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | TP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 20 V |
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