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2N7002WT3G

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2N7002WT3G

MOSFET N-CH 60V 310MA SC70-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi 2N7002WT3G is an N-Channel MOSFET designed for surface mount applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 310mA at 25°C. The key characteristic of 1.6 Ohm maximum Rds On is achieved at 500mA drain current and 10V gate-source voltage. The device exhibits a low gate charge (Qg) of 0.7 nC at 4.5V Vgs and an input capacitance (Ciss) of 24.5 pF maximum at 20V Vds. Operating over a temperature range of -55°C to 150°C, the 2N7002WT3G is supplied in an SC-70-3 package, delivered on tape and reel. Its power dissipation capability is rated at 280mW (Tj). This component is utilized in various industries including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C310mA (Ta)
Rds On (Max) @ Id, Vgs1.6Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)280mW (Tj)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageSC-70-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds24.5 pF @ 20 V

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