2N7002LT3
MOSFET N-CH 60V 115MA SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi 2N7002LT3 is an N-Channel MOSFET featuring a 60V drain-source breakdown voltage and continuous drain current capability of 115mA at 25°C (Tc). This device offers a maximum on-resistance of 7.5 Ohms at 500mA and 10V gate-source voltage. The 2N7002LT3 is packaged in a SOT-23-3 (TO-236) surface-mount configuration, suitable for applications requiring compact footprints. Key parameters include a 5V or 10V drive voltage for Rds(on) specification, a gate-source threshold voltage of 2.5V at 250µA, and input capacitance of 50pF at 25V. With a maximum power dissipation of 225mW (Ta) and an operating temperature range of -55°C to 150°C, this component is leveraged across various industrial and consumer electronics sectors. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 115mA (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 225mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
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