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2N7002LT1H

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2N7002LT1H

MOSFET N-CH 60V 115MA SOT23-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi 2N7002LT1H is an N-Channel MOSFET designed for high-density applications. This AEC-Q101 qualified device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 115mA at 25°C (Tc). The Rds On is specified at a maximum of 7.5 Ohms when Id is 500mA and Vgs is 10V, with a threshold voltage (Vgs(th)) of 2.5V at 250µA. It offers a power dissipation of 225mW (Ta) and operates across a temperature range of -55°C to 150°C (TJ). The SOT-23-3 (TO-236) surface mount package is supplied on tape and reel, making it suitable for automated assembly in automotive and industrial control applications. Input capacitance (Ciss) is a maximum of 50pF at 25V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C115mA (Tc)
Rds On (Max) @ Id, Vgs7.5Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)225mW (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 25 V
QualificationAEC-Q101

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