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2N7002KT3G

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2N7002KT3G

MOSFET N-CH 60V 320MA SOT23-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi 2N7002KT3G is an N-Channel MOSFET designed for general-purpose switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) capability of 320mA at 25°C ambient. Key electrical characteristics include a maximum on-resistance (Rds On) of 1.6 Ohms at 500mA and 10V gate drive. With a gate charge (Qg) of 0.7 nC at 4.5V and input capacitance (Ciss) of 24.5 pF at 20V, it offers efficient switching. The device is housed in a SOT-23-3 (TO-236) surface-mount package, facilitating high-density board layouts. It operates across a temperature range of -55°C to 150°C. This MOSFET is commonly employed in consumer electronics, industrial control systems, and communication infrastructure.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C320mA (Ta)
Rds On (Max) @ Id, Vgs1.6Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds24.5 pF @ 20 V

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