2N7002ET3G
MOSFET N-CH 60V 260MA SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi 2N7002ET3G is an N-Channel MOSFET with a 60V drain-source breakdown voltage. This SOT-23-3 packaged device offers a continuous drain current of 260mA at 25°C and a maximum power dissipation of 300mW. Key electrical parameters include a low on-resistance of 2.5 Ohm at 240mA and 10V, and a gate charge of 0.81 nC at 5V. Input capacitance (Ciss) is specified at a maximum of 26.7 pF at 25V. The device operates across a temperature range of -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 260mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 240mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300mW (Tj) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.81 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 26.7 pF @ 25 V |