2N7000RLRMG
MOSFET N-CH 60V 200MA TO92-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi 2N7000RLRMG is an N-Channel MOSFET designed for general-purpose switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 200mA at 25°C. The Rds On is specified at a maximum of 5 Ohms when driven by 500mA at 10V. With a gate-source threshold voltage (Vgs(th)) of 3V at 1mA, it offers a low drive voltage requirement. Input capacitance (Ciss) is rated at a maximum of 60pF at 25V. The device operates across a temperature range of -55°C to 150°C. Packaged in a TO-92 (TO-226) case with formed leads, this component is supplied in Tape & Box packaging. The 2N7000RLRMG is suitable for use in industrial and consumer electronics, particularly in power management and signal switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | TO-92 (TO-226) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
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