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2N7000RLRAG

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2N7000RLRAG

MOSFET N-CH 60V 200MA TO92-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi 2N7000RLRAG is a N-Channel MOSFET with a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 200mA at 25°C. This through-hole component, packaged in a TO-92 (TO-226) case, features a low on-resistance of 5 Ohm maximum at 500mA and 10V Vgs. With a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 3V at 1mA, it offers efficient switching characteristics. The device has an input capacitance (Ciss) of 60pF maximum at 25V and a maximum power dissipation of 350mW when mounted on a heatsink. Operating across a temperature range of -55°C to 150°C, the 2N7000RLRAG is suitable for applications in industrial control, consumer electronics, and general-purpose switching. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)350mW (Tc)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device PackageTO-92 (TO-226)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 25 V

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