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2N7000RLRA

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2N7000RLRA

MOSFET N-CH 60V 200MA TO92-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi 2N7000RLRA is an N-Channel MOSFET with a Drain-Source Voltage (Vdss) of 60V. This component features a continuous drain current (Id) of 200mA at 25°C (Ta) and a maximum power dissipation of 350mW (Tc). With a low on-resistance (Rds On) of 5Ohm at 500mA and 10V, and a gate threshold voltage (Vgs(th)) of 3V at 1mA, it is suitable for various switching applications. The input capacitance (Ciss) is specified at a maximum of 60pF at 25V. This device utilizes MOSFET technology and is housed in a TO-92 (TO-226) package with formed leads, supplied on tape and reel. It operates within a temperature range of -55°C to 150°C. This component finds application in general purpose switching and amplification circuits, including those used in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)350mW (Tc)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device PackageTO-92 (TO-226)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 25 V

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