2N7000G
MOSFET N-CH 60V 200MA TO92-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 2N7000G is an N-Channel MOSFET designed for general-purpose switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 200mA at 25°C. The Rds On is specified at 5 Ohms maximum, with a gate-source voltage range for optimal performance from 4.5V to 10V. With a maximum power dissipation of 350mW (Tc), it is packaged in a standard TO-92 (TO-226) through-hole configuration. The input capacitance (Ciss) is rated at 60pF maximum at 25V. Operating temperature range is -55°C to 150°C. This device is commonly utilized in industrial automation, consumer electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | TO-92 (TO-226) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
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