1HN04CH-TL-W
MOSFET N-CH 100V 270MA 3CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi 1HN04CH-TL-W is an N-Channel MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain current (Id) of 270mA at 25°C. It is supplied in a 3-CPH package, specifically TO-236-3, SC-59, SOT-23-3, and is available on tape and reel. The device exhibits a maximum Rds On of 8 Ohms at 140mA and 10V Vgs. Key parameters include a Gate Charge (Qg) of 0.9 nC and Input Capacitance (Ciss) of 15 pF, both specified at relevant voltage conditions. The operating temperature range extends to 150°C (TJ). This MOSFET is suitable for use in various electronic systems, including power management and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 270mA (Ta) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 140mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.6V @ 100µA |
| Supplier Device Package | 3-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15 pF @ 20 V |
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