SBE002-TL-W
DIODE SCHOTTKY 50V 1A 6CPHManufacturer: onsemi
Categories: Single Diodes
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onsemi SBE002-TL-W is a Schottky diode designed for efficient power rectification. This component features a 50V reverse voltage rating (Vr) and a 1A average rectified current capability (Io). The forward voltage drop (Vf) is a low 550mV at 1A, contributing to reduced power dissipation. With a reverse leakage current of 80 µA at 25V and a reverse recovery time (trr) of 10ns, it is suitable for high-frequency switching applications. The diode exhibits a junction capacitance of 52pF at 10V and 1MHz. Packaged in a 6-CPH (SOT-23-6) surface mount configuration and supplied on tape and reel, the SBE002-TL-W is utilized in automotive, industrial, and consumer electronics power management circuits. Its operating junction temperature range is -55°C to 125°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 10 ns |
| Technology | Schottky |
| Capacitance @ Vr, F | 52pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | 6-CPH |
| Operating Temperature - Junction | -55°C ~ 125°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 550 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 25 V |
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