PCRKA30065F8M1
DIODE, 650 V, 300 A BARE DIEManufacturer: onsemi
Categories: Single Diodes
Quality Control: Learn More
The onsemi PCRKA30065F8M1 is a high-performance silicon carbide Schottky diode designed for demanding applications. This bare die component offers a 650 V reverse voltage rating and a substantial 300 A forward current capability. It features a low forward voltage drop of 1.9 V at 300 A and a typical reverse leakage of 30 µA at 650 V.
Engineered for reliability, the PCRKA30065F8M1 operates across a junction temperature range of -40°C to 175°C. Its fast recovery characteristics, with a reverse recovery time of 100 ns, contribute to increased system efficiency. This diode is qualified to AEC-Q101 standards, making it suitable for automotive applications, including electric vehicle powertrains and onboard charging systems. The component is supplied in bulk packaging as a die for flexible integration into custom power module designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 100 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 300A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 300 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
MURH8100E
RECTIFIER, AVALANCHE, 4A, 1000V,
NRVUA160VT3G-GA01
DIODE GEN PURP 600V 2A SMA
MBRM110LT3
DIODE SCHOTTKY 10V 1A POWERMITE
