PCFFS5065AF
DIODE SIL CARBIDE 650V 60A DIEManufacturer: onsemi
Categories: Single Diodes
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onsemi's PCFF5065AF is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This die-level component offers a maximum DC reverse voltage of 650 V and a continuous average rectified forward current of 60 A. Key electrical characteristics include a forward voltage drop of 1.75 V at 50 A and a reverse leakage current of 200 µA at 650 V. Notably, this device exhibits zero reverse recovery time for currents greater than 500 mA, making it ideal for demanding power switching scenarios. The operating junction temperature range is -55°C to 175°C. Its SiC technology provides superior thermal performance and efficiency compared to traditional silicon diodes. This component is commonly utilized in power supplies, motor drives, electric vehicle charging, and industrial power conversion systems. Supplied in tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 2530pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 60A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 50 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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