PCFFS4065AF
DIODE SIL CARBIDE 650V 40A DIEManufacturer: onsemi
Categories: Single Diodes
Quality Control: Learn More
onsemi PCFF4065AF is a Silicon Carbide (SiC) Schottky diode, supplied as a Die in Tray packaging. This component offers superior performance characteristics with a maximum DC reverse voltage (Vr) of 650 V and a forward voltage (Vf) of 1.75 V at a high forward current (If) of 40 A. Its average rectified output current (Io) is rated at 40 A. Key features include a negligible reverse leakage current of 200 µA at 650 V and an exceptionally fast switching speed, indicated by a reverse recovery time (trr) of 0 ns, specifically noted as "No Recovery Time > 500mA (Io)". The diode exhibits a capacitance of 1989 pF at 1V and 100kHz. Operating across a junction temperature range of -55°C to 175°C, this SiC Schottky diode is suitable for high-power applications in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1989pf @ 1V, 100kHz |
| Current - Average Rectified (Io) | 40A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 40 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
Request a Quote
Clients Also Buy
FFSH3065ADN-F155
DIODE SIL CARB 650V 23A TO247-3
SURS8220T3G-IR01
DIODE GEN PURP 200V 2A SMB
MURH8100E
RECTIFIER, AVALANCHE, 4A, 1000V,
