PCFFS3065AF
DIODE SIL CARBIDE 650V 30A DIEManufacturer: onsemi
Categories: Single Diodes
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onsemi PCFFS3065AF is a Silicon Carbide (SiC) Schottky diode designed for high-efficiency power applications. This die-format component offers a maximum reverse voltage of 650 V and a continuous forward current (Io) of 30 A, with a low forward voltage drop of 1.75 V at 30 A. Featuring zero reverse recovery time, it is ideal for applications demanding reduced switching losses and improved thermal performance. The diode exhibits a low reverse leakage current of 200 µA at its maximum reverse voltage. With a maximum junction operating temperature of 175°C, the PCFFS3065AF is suited for demanding environments, including electric vehicle charging, industrial power supplies, and renewable energy systems. The component is supplied in tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 30 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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