The onsemi PCFFS0865AF is a 650V, 8A Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion applications. This component, supplied in wafer form for advanced manufacturing processes, offers a forward voltage drop of 1.75V at 8A and exhibits negligible reverse recovery time, a key characteristic of SiC technology. Its robust design allows for operation at junction temperatures up to 175°C, making it suitable for demanding environments. The low reverse leakage current of 200 µA at 650V further contributes to its efficiency. Applications for this device span across electric vehicle (EV) charging, industrial power supplies, solar inverters, and motor control systems where superior performance and reliability are paramount.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | Wafer |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 8 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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