PCFFS05120AF
DIODE SIL CARBIDE 1.2KV 5A DIEManufacturer: onsemi
Categories: Single Diodes
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onsemi Silicon Carbide (SiC) Schottky Diode, part number PCFFS05120AF, offers exceptional performance for demanding applications. This die-level component features a 1200V DC reverse voltage rating and a 5A average rectified forward current capability. Its SiC Schottky technology ensures a maximum forward voltage drop of 1.75V at 5A and a negligible reverse recovery time, categorized as No Recovery Time > 500mA (Io). With a low leakage current of 200 µA at 1200V and a junction operating temperature range of -55°C to 175°C, it is well-suited for high-power switching, power factor correction, and electric vehicle power systems. The device capacitance is 337pF at 1V and 100kHz. This component is provided in tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 337pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 5 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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