NSR10T406MX2WT5G
DIODE SCHOTTKY 40V 1A 2-X2DFNWManufacturer: onsemi
Categories: Single Diodes
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onsemi NSR10T406MX2WT5G is a Schottky barrier diode designed for demanding applications. This component features a 40V reverse voltage rating and a 1A average rectified current capability. With a low forward voltage of 530mV at 1A and a reverse leakage of only 10µA at 40V, it minimizes power loss. The device boasts a capacitance of 255pF at 1V and 1MHz, and a reverse recovery time of 74ns, categorizing it as a fast recovery diode. Its wettable flank 2-X2DFNW (1.6x0.8) surface mount package facilitates efficient automated assembly and improved solder joint reliability, often utilized in power management, automotive, and industrial sectors. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 2-XDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 74 ns |
| Technology | Schottky |
| Capacitance @ Vr, F | 255pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | 2-X2DFNW (1.6x0.8) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 530 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 40 V |
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