NSR10F30QNXT5G
DIODE SCHOTTKY 30V 1A 2DSNManufacturer: onsemi
Categories: Single Diodes
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The onsemi NSR10F30QNXT5G is a Schottky diode designed for high-efficiency rectification. This component offers a 30V reverse voltage (Vr) and a 1A average forward rectified current (Io). Featuring a low forward voltage (Vf) of 470mV at 1A, it minimizes power loss during operation. The reverse leakage current is specified at 100 µA at 30V.
The NSR10F30QNXT5G utilizes Schottky technology, ensuring fast switching speeds. It is housed in a compact 2-DSN (1.4x0.6) surface mount package, ideal for space-constrained applications. The operating junction temperature range is -55°C to 125°C, suitable for demanding environments. This diode is commonly employed in power supply circuits, battery charging systems, and general-purpose rectification across automotive and industrial sectors. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 2-XDFN |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | 2-DSN (1.4x0.6) |
| Operating Temperature - Junction | -55°C ~ 125°C |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 470 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 30 V |
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