NSR02301MX4T5G
01005_TRENCH_SCHOTTKY_30V_200MA_Manufacturer: onsemi
Categories: Single Diodes
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The onsemi NSR02301MX4T5G is a Schottky barrier diode designed for efficient rectification and switching applications. Featuring a 30 V reverse voltage rating and a 200 mA average rectified forward current (Io), this component is suitable for demanding signal processing tasks. Its low forward voltage of 540 mV at 200 mA minimizes power loss. The device exhibits a reverse leakage current of 100 µA at its maximum reverse voltage. With a capacitance of 19 pF at 5 V and 1 MHz, it offers excellent high-frequency performance. The NSR02301MX4T5G has a reverse recovery time (trr) of 11 ns. Packaged in a compact 01005 (0402 Metric) 2-X4DFN (0.45x0.24) surface mount configuration, it is supplied on tape and reel. This diode is commonly utilized in consumer electronics, mobile devices, and power management circuits requiring small signal rectification. Operating temperature range is -55°C to 125°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 01005 (0402 Metric) |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 11 ns |
| Technology | Schottky |
| Capacitance @ Vr, F | 19pF @ 5V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | 2-X4DFN (0.45x0.24) |
| Operating Temperature - Junction | -55°C ~ 125°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 540 mV @ 200 mA |
| Current - Reverse Leakage @ Vr | 100 µA @ 30 V |
| Qualification | - |
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