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NRVUS360VDBT3G

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NRVUS360VDBT3G

DIODE GEN PURP 600V 3A SMB

Manufacturer: onsemi

Categories: Single Diodes

Quality Control: Learn More

onsemi NRVUS360VDBT3G is a General Purpose Diode with a 600 V reverse voltage rating and a 3 A average rectified current (Io). This SMB package component features a fast recovery time of 75 ns and a maximum forward voltage (Vf) of 1.25 V at 3 A. It exhibits a low reverse leakage current of 3 µA at 600 V. Designed for demanding applications, this diode is AEC-Q101 qualified and rated for an operating junction temperature range of -65°C to 175°C, making it suitable for automotive and industrial environments. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDO-214AA, SMB
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)75 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)3A
Supplier Device PackageSMB
Operating Temperature - Junction-65°C ~ 175°C
GradeAutomotive
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.25 V @ 3 A
Current - Reverse Leakage @ Vr3 µA @ 600 V
QualificationAEC-Q101

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