NRVBM110ET1G
DIODE SCHOTTKY 10V 1A POWERMITEManufacturer: onsemi
Categories: Single Diodes
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onsemi POWERMITE® NRVBM110ET1G is a Schottky diode designed for efficient rectification. This surface mount component features a maximum reverse voltage of 10 V and an average rectified current capability of 1 A. The forward voltage drop is specified at a maximum of 595 mV at an IF of 2 A. Exhibiting a low reverse leakage current of 1 µA at 10 V, this diode is suitable for applications requiring minimal standby power. The DO-216AA package, also known as Powermite, offers a compact footprint for space-constrained designs. Operating across a junction temperature range of -55°C to 150°C, the NRVBM110ET1G is commonly found in power supply circuits, automotive electronics, and general-purpose rectification within consumer electronics. It is supplied in Tape & Reel packaging.
Additional Information
Series: POWERMITE®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-216AA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | Powermite |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 10 V |
| Voltage - Forward (Vf) (Max) @ If | 595 mV @ 2 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 10 V |
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