NHPM120T3G
DIODE GEN PURP 200V 1A POWERMITEManufacturer: onsemi
Categories: Single Diodes
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The onsemi NHPM120T3G is a general-purpose diode designed for efficient power management. This surface-mount component features a 200V reverse voltage rating and a 1A average rectified forward current capability. Its compact DO-216AA (Powermite) package is suitable for space-constrained applications. The diode exhibits a fast recovery time of 25 ns, ideal for switching applications where reduced switching losses are critical. With a maximum forward voltage drop of 1V at 1A, it ensures low power dissipation. The reverse leakage current is specified at a low 500 nA at 200V. Operating across a wide junction temperature range of -65°C to 175°C, the NHPM120T3G is utilized in various industrial and automotive power supply designs. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-216AA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | Powermite |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 200 V |