MMBD4448
DIODE GEN PURP 75V 200MA SOT23-3Manufacturer: onsemi
Categories: Single Diodes
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onsemi presents the MMBD4448, a general-purpose diode designed for high-speed switching applications. This device features a 75V reverse voltage rating and a 200mA forward current capacity. With a typical reverse leakage of 5 µA at 75V and a fast reverse recovery time of 4ns, the MMBD4448 is suitable for signal processing and switching circuits. Its low junction capacitance of 2pF at 0V and 1MHz contributes to its excellent high-frequency performance. The diode is housed in a compact SOT-23-3 (TO-236-3, SC-59) surface-mount package, ideal for space-constrained designs in telecommunications, consumer electronics, and industrial control systems. The forward voltage drop is 1V at 100mA, and it operates within a junction temperature range of -55°C to 150°C. Supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | SOT-23-3 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 75 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 75 V |
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