MBR30H100MFST1G
DIODE SCHOTTKY 100V 30A 5DFNManufacturer: onsemi
Categories: Single Diodes
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onsemi MBR30H100MFST1G is a 100V Schottky diode featuring a 30A average rectified current (Io) capability. This device is housed in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN with 5 leads, for efficient surface mounting. The forward voltage drop (Vf) is a maximum of 900mV at 30A, and the reverse leakage current (Ir) is rated at 100 µA at 100V. Operating across a junction temperature range of -55°C to 150°C, this diode is designed for applications requiring fast switching characteristics. The MBR30H100MFST1G is commonly utilized in power supply rectification, reverse polarity protection, and free-wheeling diode applications across various industrial and automotive sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 30 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 100 V |
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