M1MA151KT1
DIODE GEN PURP 40V 100MA SC59Manufacturer: onsemi
Categories: Single Diodes
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The onsemi M1MA151KT1 is a general-purpose silicon diode designed for small signal applications. This component features a maximum repetitive peak reverse voltage of 40V and a continuous average forward rectified current capability of 100mA. Its low forward voltage drop of 1.2V at 100mA and a reverse leakage current of 100 nA at 35V are characteristic of its standard recovery technology. The M1MA151KT1 is housed in a compact SC-59 (TO-236-3, SOT-23-3) surface mount package, suitable for high-density board designs. With a junction operating temperature range up to 150°C and a reverse recovery time of 3 ns, this diode is well-suited for use in consumer electronics, industrial control systems, and telecommunications equipment. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 3 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 100mA |
| Supplier Device Package | SC-59 |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 35 V |
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