ISL9R860S3ST
DIODE GEN PURP 600V 8A D2PAKManufacturer: onsemi
Categories: Single Diodes
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The onsemi Stealth™ series ISL9R860S3ST is a fast recovery diode designed for general-purpose applications. Featuring a 600V reverse voltage rating and an average rectified forward current capability of 8A, this component utilizes avalanche technology for enhanced robustness. The forward voltage drop is specified at a maximum of 2.4V at 8A. With a reverse leakage current of 100 µA at 600V and a reverse recovery time of 30 ns, it is suitable for demanding power switching applications. The device is housed in a TO-263 (D2PAK) surface mount package and operates within a junction temperature range of -55°C to 175°C. This component is typically employed in power supplies, motor control, and lighting systems.
Additional Information
Series: Stealth™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Avalanche |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-263 (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.4 V @ 8 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 600 V |
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