FFSPF2065A
DIODE SIC 650V 20A TO220F-2FSManufacturer: onsemi
Categories: Single Diodes
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onsemi FFSPF2065A is a Silicon Carbide (SiC) Schottky diode, a high-performance discrete component designed for demanding applications. This single diode offers a maximum DC reverse voltage (Vr) of 650 V and an average rectified current (Io) of 20A. Its key advantage lies in its SiC technology, enabling zero reverse recovery time (trr) for currents greater than 500mA (Io), significantly reducing switching losses and improving overall efficiency. The component exhibits a typical capacitance of 1085pF at 1V and 100kHz, with a reverse leakage current of 200 µA at its maximum reverse voltage. Packaged in a TO-220F-2FS (TO-220-2 Full Pack) for through-hole mounting, it operates across a wide junction temperature range of -55°C to 175°C. This device is suitable for power supply, motor control, and electric vehicle applications where high efficiency and robust performance are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1085pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-220F-2FS |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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