FFSPF1065A
DIODE SIC 650V 10A TO220F-2FSManufacturer: onsemi
Categories: Single Diodes
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onsemi FFSPF1065A SiC Schottky Diode, 650 V, 10 A. This TO-220F-2FS packaged component offers zero reverse recovery time, characterized by its high performance in switching applications. Key electrical specifications include a maximum DC reverse voltage of 650 V and an average rectified forward current of 10 A. The junction operating temperature range is -55°C to 175°C. Capacitance at 1V is 575pF at 100kHz. Reverse leakage current is rated at 200 µA at 650 V. This device is suitable for power electronics applications across various industries including automotive, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 575pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220F-2FS |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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