FFSPF0865A
DIODE SIC 650V 8A TO220F-2FSManufacturer: onsemi
Categories: Single Diodes
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The onsemi FFSPF0865A is a Silicon Carbide (SiC) Schottky diode with a 650V reverse voltage rating and an 8A average rectified current (Io). Featuring a TO-220F-2FS package for through-hole mounting, this component offers a low forward voltage (Vf) of 1.75V at 8A. Its design delivers zero reverse recovery time (trr) for currents greater than 500mA, enabling high-efficiency switching. The FFSPF0865A exhibits a reverse leakage current of 200 µA at 650V and a junction capacitance of 463pF at 1V. Operating across a wide temperature range from -55°C to 175°C, this diode is suitable for applications in power factor correction, power supplies, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 463pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-220F-2FS |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 8 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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