FFSP0465A
DIODE SIL CARB 650V 8.6A TO220-2Manufacturer: onsemi
Categories: Single Diodes
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The onsemi FFSP0465A is a 650V Silicon Carbide (SiC) Schottky diode, ideal for high-efficiency power conversion applications. This through-hole component, packaged in a TO-220-2, features a maximum forward voltage (Vf) of 1.75V at 4A and an average rectified current (Io) of 8.6A. With a reverse leakage of 200 µA at 650V and a junction operating temperature range of -55°C to 175°C, it offers robust performance. Notably, it exhibits no significant reverse recovery time (trr) above 500mA, contributing to reduced switching losses. This SiC diode is commonly employed in power supplies, electric vehicle charging, renewable energy systems, and industrial motor drives. The FFSP0465A boasts a capacitance of 258pF at 1V, 100kHz.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 258pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 8.6A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 4 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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